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Abstract Organic semiconductors based on liquid crystal (LC) molecules have attracted increasing interest. In this work, two linear LCs based on 2,5‐bis(thien‐2‐yl)thieno[3,2‐b]thiophene (BTTT) mesogen are designed and synthesized, including BTTT/dEO3 with two symmetrically attached tri(ethylene oxide) groups and BTTT/mEO6 with one asymmetrically attached hexa(ethylene oxide) group. These two molecules have comparable functional‐group compositions but different molecular geometries, leading to their moderately different material performances. Both LCs show smectic mesophases with relatively low transition temperatures as confirmed by differential scanning calorimetry and polarized optical microscopy. A combination of experimental grazing incidence wide‐angle X‐ray scattering and molecular dynamics (MD) simulations reveals a herringbone packing motif of BTTT segments in both LCs while a smaller molecular tilt angle in BTTT/mEO6. Ionic conductivities are measured by doping LCs with different amounts of ionic dopants, lithium bis(trifluoromethanesulfonyl)imide (LiTFSI). BTTT/mEO6 shows better smectic phase stability to higher LiTFSI doping ratios. Both LCs exhibit similar ionic conductivities in the smectic phases, but BTTT/mEO6 outperforms BTTT/dEO3 by a factor of three in the amorphous phase at higher temperatures. MD simulations, performed to examine the ion solvation environment, reveal that BTTT/mEO6 is more efficient in coordinating Li‐ions and screening their interactions with TFSI‐ions which further promote ionic transport. 

Abstract A new type of a positive tone chemically amplified photoresist based on well‐defined, sequence‐controlled polypeptoids with ten repeat‐units are synthesized and their potential for extreme‐UV lithography (EUVL) is demonstrated, resulting in line‐space patterns of 70 nm pitch. The synthesized samples contain 4‐(ethyl) phenol (Eph) and propyne (Ppy) side chains, while their change in solubility upon exposure is induced by the deprotection of 4‐(ethyl) phenol side groups. The resist performance is evaluated using deep UV and extreme‐UV lithography. While all samples are developable in isopropyl alcohol, the content, and the sequence of hydrophobic alkyne side chains lead to a detectable change in solubility, dissolution rate, and resist performance. 

Abstract Poly(styrene‐co‐N‐maleimide) copolymers bearingtert‐butoxycarbonyl (t‐BOC)‐protected amine groups attached to side chains of varying lengths are synthesized via activators regenerated by electron transfer atom transfer radical polymerization (ARGET‐ATRP) and investigated from the perspective of photoresist applications. The length of the alkyl substituents enables control of thermal properties as well as hydrophobicity, which are critically important for resist processing. Removal of the acid labilet‐BOC group during deep‐UV (DUV)exposure shifts solubility in the exposed areas and well‐defined line space patterns of 1 µm are obtained for the selected copolymers. The correlation between glass transition temperature (T_g) and solubility contrast determines the lithographic performance where the copolymers with shorter alkyl chains exhibit promising results.